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UDN302L-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UDN302L-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UDN302 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-278.B TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS(V) 0 50 250 100 150 200 300 350 400 450 030 10 20 40 0 50 250 100 150 200 300 0.2 00.8 0.4 0.6 1.0 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 150 0 100 50 200 3.0 0 1.0 2.0 2.5 0.5 1.5 ID=-2.4A VGS=-4.5V ID=-2A VGS=-2.5V |
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