UG9H

Preliminary

DUAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-026.c



PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

50

V

Input Voltage

-6 ~ +40

V

Output Current

70

mA

100

mA

Power Dissipation (Note 2)

150

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. 120mW per element must not be exceeded.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Input Voltage

0.5

V

3

V

Output Voltage

0.1

0.3

V

Input Current

0.88

mA

Output Current

0.5

µA

DC Current Gain

30

Transition Frequency

250

MHz

Input Resistance

7

10

13

KΩ

Resistance Ratio

0.8

1

1.2

Note: Transition frequency of the transistor.