UT6302G-AE2-R datasheet(2/5 Pages) UTC

2 / 5 page

UT6302

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-363.F



ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-20

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (VGS=-4.5V, Ta=25°C)

-0.78

Pulsed Drain Current (Note 2)

IDM

-4.9

Peak Diode Recovery dv/dt (Note 3)

dv/dt

-5.0

V/nS

Power Dissipation (TA=25°C)

540

Linear Derating Factor above 25°C

4.3

mW /°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note:1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by TJ(MAX)

ISD≤-0.61A, di/dt≤76A/µs, VDD≤V(BR)DSS, TJ=150°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

230

°C/W

Note: Surface Mounted on FR-4 Board, t ≤ 5sec.



ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0 V, ID=-250 µA

-20

Drain-Source Leakage Current

IDSS

VDS=-16V,VGS=0V

-1.0

µA

Gate-Source Leakage Current

IGSS

VGS=±12 V, VDS=0 V

±100

Drain-Source Breakdown Voltage

△

BVDSS △

/TJ ID=-1mA, Reference to 25°C

-4.9

mV/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID=-250µA

-0.70

-1.5

VGS=-4.5V, ID=-0.61A (Note 2)

0.60

Ω

Static Drain-Source On-Resistance

RDS(ON)

VGS=-2.7V, ID=-0.31A (Note 2)

0.90

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS=-15V, VGS=0V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

2.4

3.6

Gate Source Charge

QGS

0.56

0.84

Gate Drain Charge

QGD

VGS=-4.5V, VDS=-16V

ID=-0.61A (Note 1, 2)

1.0

1.5

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

VDD=-10V, ID=-0.61A,

RG=6.2Ω, RD=16Ω (Note 1, 2)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=-0.61A, VGS=0V

-1.2

Maximum

Continuous

Drain-Source

Diode Forward Current

-0.54

Maximum Pulsed Drain-Source Diode

Forward Current (Note 1)

ISM

-4.9

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

TJ=25°C ,IF=-0.61A,

di/dt=100A/µs (Note 2)

Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX).

2. Pulse Width ≤300μs, Duty Cycle ≤2%.

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