2N7002T

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-542.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Gate Source Voltage

Continuous

20

V

Non Repetitive(tp<50μs)

40

Drain Current

Continuous

300

mA

Pulsed

800

Power Dissipation

200

mW

Derated Above 25°C

1.6

mW/°C

Junction Temperature

+ 150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

625 (Note1)

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

100

nA

-100

nA

ON CHARACTERISTICS

(Note2)

Gate Threshold Voltage

1

2.1

2.5

V

Drain-Source On-Voltage

0.6

3.75

V

0.09

1.5

Static Drain-Source On-Resistance

13.5

Ω

7.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

20

50

pF

Output Capacitance

11

25

pF

Reverse Transfer Capacitance

4

5

pF

Turn-On Time

20

nS

Turn-Off Time

20

nS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

0.88

1.5

V

Maximum Pulsed Drain-Source Diode

Forward Current

0.8

A

Maximum Continuous Drain-Source

Diode Forward Current

Is

300

mA

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%