UT3N01Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-285.I



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±10

V

Drain Current

DC

0.15

A

Pulse(Note 2)

0.6

A

Power Dissipation

SOT-23-3

330

mW

SOT-323

200

SOT-523

150

SOT-363

200

Operating Temperature

-40 ~ +85

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≤10μs, Duty cycle≤1%



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Cutoff Threshold Voltage

0.4

1.3

V

Static Drain-Source On-Resistance

1.3

2.0

Ω

1.7

3.0

Ω

5.8

12.8

Ω

DYNAMIC PARAMETERS

Input Capacitance

18

pF

Output Capacitance

11

pF

Reverse Transfer Capacitance

7.5

pF

SWITCHING PARAMETERS

Total Gate Charge

5

8

nC

Gate Source Charge

0.46

nC

Gate Drain Charge

0.56

nC

Turn-ON Delay Time

See specified Test Circuit

31

35

ns

Turn-ON Rise Time

19

23

ns

Turn-OFF Delay Time

55

60

ns

Turn-OFF Fall-Time

22

28

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.87

1.2

V