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UTN3055G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UTN3055G-TN3-R
Description  N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTN3055G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTN3055
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-138.B
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
12
A
Pulsed Drain Current (Note 1)
IDM
45
Repetitive Avalanche Energy (L=0.05mH, Duty Cycle≦1%)
EAR
3
mJ
Power Dissipation
PD
43
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
60
/W
℃
Junction-to-Case
θJC
2.6
/W
℃
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
25
V
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V
25
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±250
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
0.8
1.2
2.5
V
On-State Drain Current (Note 2)
ID(ON)
VDS=10V, VGS=10V
12
A
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=10V, ID=12A
50
90
mΩ
VGS=5V, ID=12A
70
120
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=15V, f=1.0MHz
450
pF
Output Capacitance
COSS
200
pF
Reverse Transfer Capacitance
CRSS
60
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn-ON Delay Time
tD(ON)
VDS=15V, VGS=10V,
ID≒12A, RG=2.5Ω, RL=1Ω
6.0
ns
Turn-ON Rise Time
tR
6.0
ns
Turn-OFF Delay Time
tD(OFF)
20
ns
Turn-OFF Fall Time
tF
5.0
ns
Total Gate Charge
QG
VDS=15V, VGS=10V, ID=6A
15
nC
Gate-Source Charge
QGS
2.0
nC
Gate-Drain Charge
QGD
7.0
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IF=IS, VGS=0V
1.5
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
12
A
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
45
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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