PESDXS5UD datasheet(6/13 Pages) PHILIPS

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PESDXS5UD_SER_2

Product data sheet

Rev. 02 — 7 December 2006

6 of 13

NXP Semiconductors

PESDxS5UD series

Fivefold ESD protection diode arrays

f = 1 MHz; Tamb =25 °C

(1) PESD3V3S5UD

(2) PESD5V0S5UD

f = 1 MHz; Tamb =25 °C

(1) PESD12VS5UD

(2) PESD15VS5UD

(3) PESD24VS5UD

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

Fig 6.

Diode capacitance as a function of reverse

voltage; typical values

PESD3V3S5UD; PESD5V0S5UD

IR is less than 5 nA at 150 °C for:

PESD12VS5UD; PESD15VS5UD; PESD24VS5UD

Fig 7.

Relative variation of reverse leakage current as

a function of junction temperature; typical

values

Fig 8.

V-I characteristics for a unidirectional ESD

protection diode

VR (V)

006aaa700

140

100

180

220

(pF)

(1)

(2)

VR (V)

025

006aaa701

(pF)

(1)

(2)

(3)

006aaa699

10−1

Tj (°C)

−100

150

100

050

−50

IRM

IRM(25°C)

006aaa407

−VCL −VBR −VRWM

−IRM

−IR

−IPP

P-N

−

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