15N06L-TN3-R datasheet(4/7 Pages) UTC

4 / 7 page

15N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-260.F



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=Max Rating

250

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±15V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250 µA

1.7

2.5

On State Drain Current

ID(ON)

VDS>ID(ON)×RDS(ON)MAX, VGS=10V

Static Drain-Source On-Resistance

RDS(ON)

VGS=5V, ID=7.5A

100

mΩ

Forward Transconductance (Note 1)

gFS

VDS>ID(ON)×RDS(ON)MAX, ID=7.5A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

700

950

Output Capacitance

COSS

230

310

Reverse Transfer Capacitance

CRSS

110

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VGS=5V, VDD=30V, RG=4.7Ω,

ID=7.5A

Turn-ON Rise Time

160

200

Turn-OFF Delay Time

tD(OFF)

VGS=10V, VDD=48V, RG=47Ω

ID=15A

Turn-OFF Fall-Time

100

140

Total Gate Charge

VDD=40V, VGS=5V, ID=15A

Gate Source Charge

QGS

Gate Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

ISD=15 A,VGS=0V(Note 1)

1.5

Source-Drain Current

ISD

Source-Drain Current (Pulse)

ISDM

(Note 2)

Notes: 1. Pulse width=300μs, duty cycle=1.5%

2. Pulse width limited by safe operating area.

15N06L-TN3-R Datasheet(PDF) 4 Page - Unisonic Technologies

15N06L-TN3-R Datasheet(HTML) 4 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL