UF634G-S08-R datasheet(4/9 Pages) UTC

4 / 9 page

UF634

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R502-454.F



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

250

Drain-Source Leakage Current

IDSS

VDS=250V

µA

Gate- Source Leakage Current

IGSS

VGS=±30V

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS= VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=8.1A

0.45

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

730

950

Output Capacitance

COSS

110 130

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

QGS

5.8

Gate to Drain Charge

QGD

VGS=10V, VDS=200V, ID=8.1A

(Note 1, 2)

13.5

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

120

Fall-Time

VDD=125V, ID=8.1A, RG=12Ω

(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note 2)

VSD

IS=8.1A, VGS=0V, TJ=25°C

1.5

Maximum Body-Diode Continuous Current

8.1

Pulsed-Source Current (Note 1)

ISM

32.4

Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.

2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2%.

3. Essentially Independent of Operating Temperature.

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