UF3205L-TQ2-R datasheet(3/6 Pages) UTC

3 / 6 page

UF3205

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-304.D

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

Drain-Source Leakage Current

IDSS

VDS=55V,VGS=0V

μA

Gate-Source Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Breakdown Voltage Temperature

Coefficient

△

BVDSS/△TJ Reference to 25°C, ID=1mA

0.057

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-Resistance (Note)

RDS(ON)

VGS=10V, ID=62A

8.0

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

3247

Output Capacitance

COSS

781

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1MHz

211

SWITCHING PARAMETERS

Total Gate Charge

146

Gate Source Charge

QGS

Gate Drain Charge

QGD

VDS=44V, ID=62A, VGS=10V

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

101

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

VDD=28V, ID=62A, RG=4.5Ω,

VGS=10V (Note)

Internal Drain Inductance

4.5

Internal Source Inductance

7.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=62A ,VGS=0V

1.3

Maximum Continuous Drain-Source Diode

Forward Current

110

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

390

Body Diode Reverse Recovery Time

tRR

104

Body Diode Reverse Recovery Charge

QRR

IF=62A, dI/dt=100A/μs (Note)

143

215

Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.

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