UF740L-TQ2-R datasheet(3/6 Pages) UTC

3 / 6 page

UF740

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-078. G



ELECTRICAL CHARACTERISTICS (T

C =25°C, Unless Otherwise Specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID

= 250μA

400

Gate to Threshold Voltage

VGS(THR) VGS = VDS, ID

= 250μA

2.0

4.0

On-State Drain Current (Note 1)

ID(ON)

VDS >ID(ON) x RDS(ON)MAX, VGS =10V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

μA

VDS=0.8 x Rated BVDSS,

VGS=0V,TJ=125°C

250

μA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±500

Drain to Source On Resistance

RDS(ON) VGS = 10V, ID = 5.2A (Note 1)

0.38

0.55

Forward Transconductance

gFS

VDS

≥ 50V, ID = 5.2A (Note 1)

5.8

8.9

Turn-On Delay Time

tDLY(ON) VDD = 200V, ID

≈ 10A,

RGS

= 9.1Ω, RL = 20Ω, VGS = 10V

MOSFET Switching Times are Essentially

Independent of Operating Temperature

Rise Time

130

145

Turn-Off Delay Time

tDLY(OFF)

240

260

Fall Time

145

155

Total Gate Charge

(Gate to Source + Gate to Drain)

QG(TOT)

VGS = 10V, ID = 10A, IG(REF) = 1.5mA,

VDS = 0.8 x Rated BVDSS

Gate Charge is Essentially Independent of

Operating Temperature

138

Gate to Source Charge

QGS

Gate to Drain “Miller” Charge

QGD

Input Capacitance

CISS

VGS = 0V, VDS =25V, f = 1.0MHz

1170

Output Capacitance

COSS

160

Reverse - Transfer Capacitance

CRSS

Internal Drain Inductance

Measured From

the Contact Screw

on Tab to Center

of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

3.5

Measured From

the Drain Lead,

6mm (0.25in)

From Package to

Center of Die

4.5

Internal Source Inductance

Measured From

the Source Lead,

6mm (0.25in)

From Header to

Source Bonding

Pad

7.5

SOURCE TO DRAIN DIODE SPECIFICATIONS

Source to Drain Diode Voltage

VSD

TJ = 25°C, ISD = 10A, VGS = 0V (Note 1)

2.0

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing

the Integral

Reverse P-N

Junction Diode

Pulse Source to Drain Current

(Note 2)

ISM

Reverse Recovery Time

trr

TJ = 25°C, ISD = 10A, dISD

/dt = 100A/μs

170

390

790

Reverse Recovery Charge

QRR

TJ = 25°C, ISD = 10A, dISD

/dt = 100A/μs

1.6

4.5

8.2

μC

Notes: 1. Pulse Test: Pulse width

≤ 300μs, Duty Cycle≤2%.

2. Repetitive rating: Pulse width limited by maximum junction temperature.

3. VDD=50V, starting TJ =25°C, L=9.1mH, RG

=25Ω, peak IAS = 10A

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