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UK4145L-TQ2-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UK4145L-TQ2-R
Description  SWITCHING N-CHANNEL POWER MOSFET
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UK4145L-TQ2-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UK4145
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-364.b
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS =0 V)
VDSS
60
V
Gate-Source Voltage (VDS =0 V)
VGSS
±20
V
Drain Current
DC (TC =25°C)
ID
±84
A
Pulse (Note 2)
IDM
±215
A
Single Avalanche Current (Note 3)
IAS
32
A
Single Avalanche Energy (Note 3)
EAS
102
mJ
Power Dissipation (TA =25°C)
PD
1.5
W
Junction Temperature
TJ
150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10μs, Duty Cycle≤ 1%
3. L = 100μH, VDD =30V, RG =25Ω, VGS =20
0V, Starting TJ =25°C,
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
83.3
°C/W
Junction to Case
θJC
1.49
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
60
Drain-Source Leakage Current
IDSS
VDS =60V,VGS =0V
10
µA
Gate-Source Leakage Current
IGSS
VDS =0V, VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(OFF)
VDS =10V, ID =1mA
2.0
3.0
4.0
V
Drain to Source On-state Resistance
(Note)
RDS(ON)
VGS =10 V, ID =42 A
7
10
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =10V, VGS =0V, f=1MHz
5300
pF
Output Capacitance
COSS
540
Pf
Reverse Transfer Capacitance
CRSS
330
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, VGS =10V
ID =42A, RG =0Ω
25
ns
Turn-ON Rise Time
tR
17
ns
Turn-OFF Delay Time
tD(OFF)
66
ns
Turn-OFF Fall-Time
tF
9
ns
Total Gate Charge
QG
VDD =48V, VGS =10V, ID =84A
90
nC
Gate Source Charge
QGS
21
nC
Gate Drain Charge
QGD
30
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note)
VSD
VGS =0V, IS =84A
1.0
1.5
V
Reverse Recovery Time
tRR
IS =84A,VGS =0V, di/dt =100A/μs
43
ns
Reverse Recovery Charge
QRR
62
nC
Note: Pulsed



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