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TC642 Datasheet(PDF) 14 Page - Microchip Technology |
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TC642 Datasheet(HTML) 14 Page - Microchip Technology |
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14 / 28 page ![]() TC642 DS21444C-page 14 2002 Microchip Technology Inc. TABLE 5-2: TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V) 5.6 Latch-up Considerations As with any CMOS IC, the potential exists for latch-up if signals are applied to the device which are outside the power supply range. This is of particular concern during power-up if the external circuitry (such as the sensor network, VMIN divider or shutdown circuit) is powered by a supply different from that of the TC642. Care should be taken to ensure that the TC642’s VDD supply powers up first. If possible, the networks attached to VIN and VMIN should connect to the VDD supply at the same physical location as the IC itself. Even if the IC and any external networks are powered by the same supply, physical separation of the connecting points can result in enough parasitic capacitance and/or inductance in the power supply connections to delay one power supply “routing” versus another. Device Package Max. VBE(sat)/VGS (V) Min. HFE VCEO/VDS (V) Fan Current (mA) Suggested RBASE (Ω) MMBT2222A SOT-23 1.2 50 40 150 800 MPS2222A TO-92 1.2 50 40 150 800 MPS6602 TO-92 1.2 50 40 500 301 SI2302 SOT-23 2.5 NA 20 500 Note 1 MGSF1N02E SOT-23 2.5 NA 20 500 Note 1 SI4410 SO-8 4.5 NA 30 1000 Note 1 SI2308 SOT-23 4.5 NA 60 500 Note 1 Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times. |
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