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LM5116WG/NOPB Datasheet(PDF) 3 Page - Texas Instruments |
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LM5116WG/NOPB Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 34 page ![]() LM5116WG www.ti.com SNVS599D – OCTOBER 2008 – REVISED FEBRUARY 2013 PIN DESCRIPTIONS Pin Name Description 1 VIN Chip supply voltage, input voltage monitor and input to the VCC regulator. 2 UVLO If the UVLO pin is below 1.215V, the regulator will be in standby mode (VCC regulator running, switching regulator disabled). If the UVLO pin voltage is above 1.215V, the regulator is operational. An external voltage divider can be used to set an under-voltage shutdown threshold. There is a fixed 5 µA pull up current on this pin when EN is high. UVLO is pulled to ground in the event a current limit condition exists for 256 clock cycles. 3 RT/SYN The internal oscillator is set with a single resistor between this pin and the AGND pin. The recommended frequency C range is 50 kHz to 1 MHz. The internal oscillator can be synchronized to an external clock by AC coupling a positive edge onto this node. 4 EN If the EN pin is below 0.5V, the regulator will be in a low power state drawing less than 10 µA from VIN. EN must be pulled above 3.3V for normal operation. 5 RAMP Ramp control signal. An external capacitor connected between this pin and the AGND pin sets the ramp slope used for current mode control. 6 AGND Analog ground. Connect directly to PGND under the LM5116WG. 7 SS An external capacitor and an internal 10 µA current source set the soft start time constant for the rise of the error amp reference. The SS pin is held low during VCC < 4.5V, UVLO < 1.215V, or EN input low. 8 FB Feedback signal from the regulated output. This pin is connected to the inverting input of the internal error amplifier. The regulation threshold is 1.215V. 9 COMP Output of the internal error amplifier. The loop compensation network should be connected between this pin and the FB pin. 10 VOUT Output monitor. Connect directly to the output voltage. 11 DEMB Low-side MOSFET source voltage monitor for diode emulation. For start-up into a pre-biased load, tie this pin to ground at the CSG connection. For fully synchronous operation, use an external series resistor between DEMB and ground to raise the diode emulation threshold above the low-side SW on-voltage. 12 CS Current sense amplifier input. Connect to the top of the current sense resistor or the drain of the low-sided MOSFET if RDS(ON) current sensing is used. 13 CSG Current sense amplifier input. Connect to the bottom of the sense resistor or the source of the low-side MOSFET if RDS(ON) current sensing is used. 14 PGND Power ground. Connect directly to AGND under the LM5116WG. 15 LO Connect to the gate of the low-side synchronous MOSFET through a short, low inductance path. 16 VCC Locally decouple to PGND using a low ESR/ESL capacitor located as close to the controller as possible. 17 VCCX Optional input for an externally supplied VCC. If VCCX > 4.5V, VCCX is internally connected to VCC and the internal VCC regulator is disabled. If VCCX is unused, it should be connected to ground. 18 HB High-side driver supply for bootstrap gate drive. Connect to the cathode of the bootstrap diode and the positive terminal of the bootstrap capacitor. The bootstrap capacitor supplies current to charge the high-side MOSFET gate and should be placed as close to the controller as possible. 19 HO Connect to the gate of the high-side synchronous MOSFET through a short, low inductance path. 20 SW Switch node. Connect to the negative terminal of the bootstrap capacitor and the source terminal of the high-side MOSFET. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM5116WG |
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