1N60ZG-TN3-R datasheet(3/7 Pages) UTC

3 / 7 page

1N60Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-724.D



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±20

Avalanche Current (Note 2)

IAR

1.2

Continuous Drain Current

1.2

Pulsed Drain Current (Note 2)

IDM

4.8

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

4.0

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation (TA=25°C)

SOT-223

0.8

TO-252

1.5

TO-92

Junction Temperature

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

θJA

150

°C/W

TO-252

100

TO-92

140

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