5N50L-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

5N50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-476.H



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

500

Breakdown Voltage Temperature Coefficient △BVDSS △

/TJ Reference to 25°C, ID=250µA

0.5

V/°C

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

µA

VDS=400V, TC=125°C

Gate- Source Leakage Current

Forward

IGSS

VGS=30V, VDS=0V

100

Reverse

VGS=-30V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2.5A

1.4

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V,

f=1.0MHz

535 625

Output Capacitance

COSS

105

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VDD=30V, ID=0.5A,

RG=25Ω (Note 1, 2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

145 165

Fall-Time

105

Total Gate Charge

VGS=10V, VDS=50V,

ID=1.3A, IG=100μA (Note 1, 2)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=5A, VGS=0V

1.4

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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