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BSS84ZG-AE2-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BSS84ZG-AE2-R
Description  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BSS84ZG-AE2-R Datasheet(HTML) 2 Page - Unisonic Technologies

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BSS84Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-719.d
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-50
V
Gate-Source Voltage
VGSS
±20
V
DC
-0.13
Continuous Drain Current
Pulse
ID
-0.52
A
Power Dissipation
PD
0.36
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
350
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-50
V
Zero Gate Voltage Drain Current
IDSS
VDS=-50V, VGS=0V
-15
µA
Gate–Body Leakage, Forward
IGSS
VDS=0V, VGS=±20V
±10
µA
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=-1m A
-0.8
-1.7
-2
V
Static Drain–Source On–Resistance
RDS(ON)
VGS=-4.5V, ID=-0.1A
1.2
10
Ω
On-State Drain Current
ID(ON)
VGS=-10 V, VDS=-5V
-0.6
A
Forward Transconductance
gFS
VDS=-25V, ID=-0.1A
0.05
0.6
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
73
pF
Output Capacitance
COSS
10
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1MHz
5
pF
SWITCHING PARAMETERS
(Note)
Total Gate Charge
QG
0.9
1.3
nC
Gate Source Charge
QGS
0.2
nC
Gate Drain Charge
QGD
VDS=-30V, VGS=-10V,
ID=-0.1A
0.3
nC
Turn-ON Delay Time
tD(ON)
2.5
5
ns
Turn-ON Rise Time
tR
6.3
13
ns
Turn-OFF Delay Time
tD(OFF)
10
20
ns
Turn-OFF Fall-Time
tF
VDD=-30V, ID=-0.1A,VGS=-10V,
RG=6Ω,
4.8
9.6
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS= 0V, IS=-0.13A (Note)
-0.8
-1.2
V
Max. Diode Forward Current
IS
-0.13
A
Pulsed Drain-Source Current
ISm
-0.52
A
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%



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