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TLE8209-2 Datasheet(PDF) 13 Page - Infineon Technologies AG

Part # TLE8209-2
Description  SPI Programmable H-Bridge
PDF  41 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE8209-2 Datasheet(HTML) 13 Page - Infineon Technologies AG

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Data Sheet
13
Rev. 1.4, 2014-10-28
TLE8209-2
Logic Inputs and Outputs
6
Logic Inputs and Outputs
The threshold specifications for the logic inputs are compatible to both 5 and 3.3 V standard CMOS micro-
controller ports. All inputs (except ABE) feature internal pull-up current sources. The logic output SO is supplied
by
V
DDIO. VDDIO can be supplied with either 5 or 3.3 V, so the output thresholds of SO can be configured to the
required I/O voltage.
Electrical Characteristics: Control Inputs
V
S = 5 V to 28 V; VDD = 5.0 V; Tj = -40 ⋅C to 150 ⋅C, all voltages with respect to ground, positive current flowing
into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Test Conditions
Min.
Typ.
Max.
IN1, IN2
6.0.1
Low level
V
INx_L
-0.3
–
1.0
V
–
6.0.2
High level
V
INx_H
2.0
–
V
DD+0.3
V
–
6.0.3
Hysteresis
V
INx_HYS
0.2
–
1.0
V
–
6.0.4
Input Current (Pull Up)
I
INx
-30
-20
-10
µA
0 V <
V
INx < 2.1 V
6.0.5
0
2
5
µA
V
INx > 3.0 V
6.0.6
Input Capacity1)
CINx
––
20
pF
2)
DIS
6.0.7
Low level
V
DIS_L
-0.3
–
1.0
V
–
6.0.8
High level
V
DIS_H
2.0
–
V
DD+0.3
V
–
6.0.9
Hysteresis
V
DIS_HYS
0.2
–
1.0
V
–
6.0.10
Input Current (Pull Up)
I
DIS
-200
-125
-50
µA
0 V <
V
DIS< 2.1 V
6.0.11
0
2
5
µA
V
DIS > 3.0 V
6.0.12
Input Capacity1)
CDIS
––
20
pF
2)
6.0.13
Minimum Pulse Width1) tDIS
0.4
0.8
1.5
µs
–
ABE
6.0.14
Output low-level voltage
V
ABE_OUTL
––
1.2
V
V
DD_THH < VDD < 18 V
I
ABE < 5 mA
6.0.15
–
–
1.0
V
2.5 V
< V
DD < VDD_THL
I
ABE < 1 mA
6.0.16
Input threshold high
V
ABE_INH
0.7*VDD
––
V
–
6.0.17
Input threshold low
V
ABE_INL
–
–
0.3*VDD
V–
6.0.18
Hysteresis
V
ABE_INHY
0.2
–
1.0
V
–
6.0.19
Minimum pulse width1)
t
ABE
0.4
0.8
1.5
µs
–
6.0.20
ABE Input current (Pull
Down)
-
I
ABE_L
20
40
120
μA
1.5 V <
V
ABE < 18 V
6.0.21
0
–
60
μA0 V < V
ABE < 1.5 V
SI
6.0.22
Low level
V
SI_L
-0.3
–
1.0
V
–
6.0.23
High level
V
SI_H
2.0
–
V
DD+0.3
V
–
6.0.24
Hysteresis
V
SI_HYS
0.2
–
1.0
V
–
6.0.25
Input Current (Pull Up)
I
SI
-30
-20
-10
µA
0 V <
V
SI < 2.1 V
6.0.26
Input Capacity1)
CSI
14
pF
2)



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