4N60-R datasheet(3/6 Pages) UTC

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4N60-R

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-A64.a



ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

μA

VDS=480V, TC=125°С

100

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=30V, VDS=0V

100

Reverse

VGS=-30V, VDS=0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10 V, ID=2.2A

2.3

2.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS =25V, VGS=0V, f =1MHz

440 670

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

6.8

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=30V, ID=0.5A, RG=25Ω

(Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

VDS=50V, ID=1.3A, ID=100μA

VGS=10V (Note 1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=4.4A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

4.4

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

17.6

Reverse Recovery Time

trr

VGS=0 V, IS=4.4A,

dIF/dt=100 A/μs (Note 1)

250

Reverse Recovery Charge

QRR

1.5

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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