7N65-R datasheet(3/8 Pages) UTC

3 / 8 page

7N65-R

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-A11. A



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

μA

Gate- Source Leakage Current

Forward

IGSS

VGS = 30V, VDS = 0V

100

Reverse

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C

0.67

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 3.7A

0.9

1.4

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V,

f=1.0 MHz

1290 1400

Output Capacitance

COSS

105 120

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD =30V, ID =0.5A,

RG =25Ω, VGS=0~10V

(Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

240 330

Turn-Off Fall Time

110

SWITCHING CHARACTERISTICS

Total Gate Charge

VDD=50V, ID=1.3A,

VGS=10V, IG=100μA (Note 1,

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 7.4 A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

7.4

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

29.6

Reverse Recovery Time

trr

VGS = 0V, IS = 7.4 A,

dIF / dt = 100A/μs (Note 1)

320

Reverse Recovery Charge

QRR

2.4

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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