4N65ZG-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

4N65Z-E

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-995. A



ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

Gate-Source Voltage

VGSS

±20

Avalanche Current (Note 2)

IAR

4.4

Drain Current

Continuous

4.0

Pulsed (Note 2)

IDM

Avalanche Energy

Single Pulsed (Note 3)

EAS

200

Repetitive (Note 2)

EAR

10.6

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F1

TO-252

Junction Temperature

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F1

θJA

62.5

°С/W

TO-252

°С/W

Junction to Case

TO-220F1

θJc

3.47

°С/W

TO-252

2.5

°С/W

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