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RFM219SW Datasheet(PDF) 4 Page - List of Unclassifed Manufacturers |
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RFM219SW Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers |
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4 / 35 page ![]() RFM219SW www.hoperf.com Rev 1.0 | Page 4/35 E-mail:sales@hoperf.com 1. Electrical Characteristics VDD = 3.3 V, TOP = 25 ℃, FRF = 868.35 MHz, sensitivities are measured in receiving a PN9 sequence and matching to 50 Ω impedance, with the BER of 0.1%. All measurements are performed using the board RFM219SW-EM V1.0, unless otherwise noted. 1.1 Recommended Operation Conditions Table 2. Recommended Operation Conditions Parameter Symbol Conditions Min Typ Max Unit Operation Voltage Supply VDD 1.8 3.6 V Operation Temperature TOP -40 85 ℃ Supply Voltage Slew Rate 1 mV/us 1.2 Absolute Maximum Ratings Table 3. Absolute Maximum Ratings [1] Parameter Symbol Conditions Min Max Unit Supply Voltage VDD -0.3 3.6 V Interface Voltage VIN -0.3 VDD + 0.3 V Junction Temperature TJ -40 125 ℃ Storage Temperature TSTG -50 150 ℃ Soldering Temperature TSDR Lasts at least 30 seconds 255 ℃ ESD Rating [2] Human Body Model (HBM) -2 2 kV Latch-up Current @ 85 ℃ -100 100 mA Notes: [1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. [2]. The RFM219SW is high-performance RF integrated circuits with VCON/P pins having an ESD rating < 2 kV HBM. Handling and assembly of this device should only be done at ESD-protected workstations. Caution! ESD sensitive device. Precaution should be used when handling the device in order to prevent permanent damage. |
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