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5N60KL-TND-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 5N60KL-TND-R
Description  N-CHANNEL POWER MOSFET
PDF  7 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

5N60KL-TND-R Datasheet(HTML) 3 Page - Unisonic Technologies

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5N60K-MT
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R205-038.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
5
A
Pulsed Drain Current (Note 2)
IDM
20
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
220
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
TO-220F3
36
W
TO-220F2
38
W
Power Dissipation
TO-251/TO-251S
TO-252/TO-252D
PD
54
W
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 17.6mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220F/TO-220F1/
TO-220F2/TO-220F3
62.5
°C/W
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
θJA
160
°C/W
TO-220F/TO-220F1
TO-220F3
3.47
°C/W
TO-220F2
3.28
°C/W
Junction to Case
TO-251/TO-251S
TO-252/TO-252D
θJC
2.30
°C/W



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