7NM65G-TN3-R datasheet(3/7 Pages) UTC

3 / 7 page

7NM65

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-042.b



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

Continuous

Drain Current

Pulsed (Note 2)

IDM

Avalanche Energy

Single Pulsed (Note 3)

EAS

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220F/TO-220F1

Power Dissipation

TO-251/TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F/TO-220F1

62.5

Junction to Ambient

TO-251/TO-252

θJA

110

°C/W

TO-220F/TO-220F1

2.6

Junction to Case

TO-251/TO-252

θJC

2.08

°C/W

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