UT3416-H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-052.A



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±10

V

Drain Current

Continuous

6.7

A

4.2

A

Pulsed (Note 1)

26.8

A

Power Dissipation

1.56

W

Derate above 25°C

0.012

W/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

80

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

△

0.02

V/°C

Drain-Source Leakage Current

1

µA

10

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.3

0.6

0.8

V

△

2

mV/°C

Static Drain-Source On-State Resistance

15

19

mΩ

18

24

mΩ

23

32

mΩ

Forward Transconductance

9.5

S

DYNAMIC PARAMETERS

Input Capacitance

600 870

pF

Output Capacitance

70

100

pF

Reverse Transfer Capacitance

45

65

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 2, 3)

5.8

8

nC

Gate to Source Charge (Note 2, 3)

0.6

1

nC

Gate to Drain Charge (Note 2, 3)

2

4

nC

Turn-ON Delay Time (Note 2, 3)

5.0

9

ns

Rise Time (Note 2, 3)

14.4

27

ns

Turn-OFF Delay Time (Note 2, 3)

30.0

55

ns

Fall-Time (Note 2, 3)

9.2

17

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Continuous Source Current

6.7

A

Pulsed Source Current

26.8

A

Drain-Source Diode Forward Voltage

1

V

Notes: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.

3. Essentially independent of operating temperature.