UTN6266G-TM3-R datasheet(3/7 Pages) UTC

3 / 7 page

UTN6266

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-B28.d



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous

Drain Current

Pulsed

IDM

Avalanche Current (Note 3)

IAS

Avalanche Energy (Note 2, 3)

EAS

280

TO-220

TO-251

1.2

SOP-8

1.5

Power Dissipation

DFN-8(5×6)

1.92

Junction Temperature

+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Single pulse width by junction temperature TJ(max)=150°C.

3. L = 1.4mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

200

°C/W

TO-251

°C/W

SOP-8

°C/W

Junction to Ambient

DFN-8(5×6)

θJA

°C/W

TO-220

4.38

°C/W

TO-251

2.6

°C/W

SOP-8

°C/W

Junction-to-Case

DFN-8(5×6)

θJC

°C/W

Notes: 1. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.

2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.

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