UTT8P03G-K08-3020-R datasheet(3/8 Pages) UTC

3 / 8 page

UTT8P03-H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R210-006.A



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-30

Drain-Source Leakage Current

IDSS

VDS=-30V, VGS=0V

-1

µA

VDS=-30V, VGS=0V, TJ=55°C

-5

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+10

Reverse

VGS=-20V, VDS=0V

-10

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-0.8

-1.3

-1.8

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-8A

mΩ

VGS=-4.5V, ID=-7A

mΩ

On State Drain Current

ID(ON)

VGS=-10V, VDS=-5V

-60

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-15V, f=1.0MHz

930

Output Capacitance

COSS

170

Reverse Transfer Capacitance

CRSS

120

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

Ω

SWITCHING PARAMETERS (Note 2)

Total Gate Charge

VGS=-4.5V, VDS=-15V, ID=-5A

Gate to Source Charge

QGS

3.4

Gate to Drain Charge

QGD

4.2

Turn-ON Delay Time

tD(ON)

VDS=-1 5V, VGS=-10V,

RGEN=6Ω, ID=-1A

5.8

Rise Time

18.8

Turn-OFF Delay Time

tD(OFF)

46.9

Fall-Time

12.3

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-8.5

Maximum Body-Diode Pulsed Current

ISm

-17

Drain-Source Diode Forward Voltage

VSD

IS=-1A, VGS=0V

-0.74

-1

Notes: 1. The value of θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board

design.

2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.

3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low

frequency and duty cycles to keep initial TJ=25°C

4. The θJA is the sum of the thermal impedance from junction to lead θJL and lead to ambient

5. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max

6. These curves are based on the junction-to-ambient thermal impedance which is measured with the device

mounted on 1in

2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of

TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

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