SI2302CDS datasheet(2/8 Pages) TFUNK

2 / 8 page

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Document Number: 68645

S12-2336-Rev. D, 01-Oct-12

Vishay Siliconix

Si2302CDS

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.comm

Notes:

a. Pulse test: Pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.40

0.85

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

0.1

µA

VDS = 20 V, VGS = 0 V, TJ = 50 °C

VDS = 20 V, VGS = 0 V, TJ = 70 °C

On-State Drain Currenta

ID(on)

VDS 10 V, VGS = 4.5 V

Drain-Source On-Resistancea

RDS(on)

VGS = 4.5 V, ID = 3.6 A

0.045

0.057



VGS = 2.5 V, ID = 3.1 A

0.056

0.075

Forward Transconductancea

gfs

VDS = 5 V, ID = 3.6 A

Diode Forward Voltage

VSD

IS = 0.95 A, VGS = 0 V

0.7

1.2

Dynamicb

Total Gate Charge

VDS = 10 V, VGS = 4.5 V, ID = 3.6 A

3.5

5.5

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

0.45

Gate Resistance

f = 1 MHz



Switching

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 2.78 

ID  3.6 A, VGEN = 4.5 V, Rg = 1 

815

Rise Time

715

Turn-Off Delay Time

td(off)

Fall Time

715

Source-Drain Reverse Recovery Time

trr

IF = 3.6 A, dI/dt = 100 A/µs

8.5

Body Diode Reverse Recovery Charge

Qrr

Output Characteristics

0.0

0.5

1.0

1.5

2.0

VDS - Drain-to-Source Voltage (V)

VGS =5 V thru 2 V

VGS =1 V

VGS =1.5 V

Transfer Characteristics

0.0

0.4

0.8

1.2

1.6

2.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

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