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SI6562CDQ Datasheet(PDF) 2 Page - Vishay Telefunken |
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SI6562CDQ Datasheet(HTML) 2 Page - Vishay Telefunken |
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2 / 17 page  www.vishay.com 2 Document Number: 68954 S-82575-Rev. A, 27-Oct-08 Vishay Siliconix Si6562CDQ New Product Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 20 V VGS = 0 V, ID = - 250 µA P-Ch - 20 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 22 mV/°C ID = - 250 µA P-Ch - 21 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 3.5 ID = - 250 µA P-Ch 3.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 V VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V N-Ch ± 100 nA P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 µA VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 30 A VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 30 Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 5.7 A N-Ch 0.018 0.022 Ω VGS = - 4.5 V, ID = - 5.1 A P-Ch 0.024 0.030 VGS = 2.5 V, ID = 4.4 A N-Ch 0.029 0.036 VGS = - 2.5 V, ID = - 4.2 A P-Ch 0.036 0.045 Forward Transconductanceb gfs VDS = 10 V, ID = 5.7 A N-Ch 17 S VDS = - 10 V, ID = - 5.1 A P-Ch 22 Dynamica Input Capacitance Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz N-Ch 850 pF P-Ch 1200 Output Capacitance Coss N-Ch 150 P-Ch 260 Reverse Transfer Capacitance Crss N-Ch 70 P-Ch 45 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 5.7 A N-Ch 15 23 nC VDS = - 10 V, VGS = - 10 V, ID = - 5.1 A P-Ch 34 51 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.7 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A N-Ch 6.7 11 P-Ch 17 30 Gate-Source Charge Qgs N-Ch 1.8 P-Ch 3 Gate-Drain Charge Qgd N-Ch 0.9 P-Ch 5.5 Gate Resistance Rg f = 1 MHz N-Ch 2 Ω P-Ch 6 |
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