SI8424CDB datasheet(2/11 Pages) TFUNK

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Si8424CDB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. C, 20-Jul-15

Document Number: 63894

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Maximum under steady state conditions is 85 °C/W.

c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

d. Maximum under steady state conditions is 175 °C/W.

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, b

t = 5 s

RthJA

°C/W

Maximum Junction-to-Ambient c, d

t = 5 s

RthJA

110

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

V

DS/TJ

ID = 250 μA

-3-

mV/°C

VGS(th) Temperature Coefficient

VG

S(th)/TJ

--2.6

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

0.35

0.8

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS= 8 V, VGS = 0 V

μA

VDS = 8 V, VGS = 0 V, TJ = 70 °C

On-State Drain Current a

ID(on)

VDS  5 V, VGS = 4.5 V

Drain-Source On-State Resistance a

RDS(on)

VGS = 4.5 V, ID = 2 A

0.015

0.020



VGS = 2.5 V, ID = 1 A

0.016

0.021

VGS = 1.8 V, ID = 1 A

0.017

0.023

VGS = 1.5 V, ID = 1 A

0.018

0.028

VGS = 1.2 V, ID = 0.5 A

0.022

0.045

Forward Transconductance a

gfs

VDS = 4 V, ID = 2 A

Dynamic b

Input Capacitance

Ciss

VDS = 4 V, VGS = 0 V, f = 1 MHz

2340

Output Capacitance

Coss

870

Reverse Transfer Capacitance

Crss

600

Total Gate Charge

VDS = 4 V, VGS = 4.5 V, ID = 2 A

-25

Gate-Source Charge

Qgs

-3.3

Gate-Drain Charge

Qgd

-3.6

Gate Resistance

VGS = 0.1 V, f = 1 MHz

3.5



Turn-On Delay Time

td(on)

VDD = 4 V, RL = 2 

ID @ 2 A, VGEN = 4.5 V, Rg = 1 

-13

Rise Time

-19

Turn-Off Delay Time

td(off)

-73

150

Fall Time

-20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode

TA = 25 °C

2.3 c

Pulse Diode Forward Current

ISM

Body Diode Voltage

VSD

IS = 2 A, VGS = 0 V

0.7

1.2

Body Diode Reverse Recovery Time

trr

IF = 2 A, dI/dt = 100 A/μs, TJ = 25 °C

-40

Body Diode Reverse Recovery Charge

Qrr

-20

Reverse Recovery Fall Time

-15-

Reverse Recovery Rise Time

-25-

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