SIA537EDJ datasheet(2/14 Pages) TFUNK

2 / 14 page

SiA537EDJ

www.vishay.com

Vishay Siliconix

S13-2635-Rev. A, 30-Dec-13

Document Number: 62934

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

N-CHANNEL

P-CHANNEL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum Junction-to-Ambient b,f

 5 s

RthJA

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

12.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch

VGS = 0 V, ID = -250 μA

P-Ch

-20

VDS Temperature Coefficient

V

DS/TJ

ID = 250 μA

N-Ch

mV/°C

ID = -250 μA

P-Ch

-15

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 μA

N-Ch

-2.5

ID = -250 μA

P-Ch

2.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch

0.4

VDS = VGS, ID = -250 μA

P-Ch

-0.4

-1

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

N-Ch

± 0.5

μA

P-Ch

± 3

VDS = 0 V, VGS = ± 8 V

N-Ch

± 5

P-Ch

± 30

Zero Gate Voltage Drain Current

IDSS

VDS = 12 V, VGS = 0 V

N-Ch

VDS = -20 V, VGS = 0 V

P-Ch

-1

VDS = 12 V, VGS = 0 V, TJ = 55 °C

N-Ch

VDS = -20 V, VGS = 0 V, TJ = 55 °C

P-Ch

-10

On-State Drain Current b

ID(on)

VDS  5 V, VGS = 4.5 V

N-Ch

VDS  -5 V, VGS = -4.5 V

P-Ch

-10

Drain-Source On-State Resistance b

RDS(on)

VGS = 4.5 V, ID = 5.2 A

N-Ch

0.023

0.028



VGS = -4.5 V, ID = -3.8 A

P-Ch

0.044

0.054

VGS = 2.5 V, ID = 4.8 A

N-Ch

0.027

0.033

VGS = -2.5 V, ID = -3.3 A

P-Ch

0.057

0.070

VGS = 1.8 V, ID = 2.5 A

N-Ch

0.035

0.042

VGS = -1.8 V, ID = -1 A

P-Ch

0.075

0.104

VGS = -1.5 V, ID = -0.5 A

P-Ch

0.097

0.165

Forward Transconductance b

gfs

VDS = 6 V, ID = 5.2 A

N-Ch

VDS = -6 V, ID = -3.6 A

P-Ch

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