MBR760 datasheet(2/3 Pages) UTC

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MBR760

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R202-030.a



ABSOLUTE MAXIMUM RATINGS (TA=+25°C unless otherwise specified)

Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

Working Peak Reverse Voltage

VRWM

Peak Repetitive Reverse Voltage

VRRM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current e(Note 1) TC=+125°C

7.5

Non-Repetitive Peak Forward Surge Current 8.3ms Single

Half Sine-Wave Superimposed on Rated Load

IFSM

150

Voltage Rate of Change (Rated VR)

dV/dt

10000

V/us

Operating Temperature

-65~+150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case (Note 1)

θJC

3.5

°C/W



ELECTRICAL CHARACTERISTICS (TA =+25°C unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Forward Voltage Drop

VFM

IF=7.5A, TC=25°C

0.72

IF=7.5A, TC=125°C

0.67

Peak Reverse Current at Rated DC Blocking

Voltage

IRM

TC=25°C

1.0

TC=125°C

Junction Capacitance (Note 2)

400

Notes: 1. Thermal resistance junction to case mounted on heatsink

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC

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