MGBR10L45

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R601-113.c



Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load,derate current by 20%.

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

45

V

WorkingPeak Reverse Voltage

45

V

Peak Repetitive Reverse Voltage

45

V

RMS Reverse Voltage

32

V

Average Rectified Output Current

10

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

90

A

Repetitive Peak Avalanche Power (1μs, 25°C)

5000

W

Operating Junction Temperature

-65~+150

°C

Storage Temperature

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220-2

60

TO-252

110

Junction to Ambient

TO-277

73 (Note 3)

°C/W

TO-220-2

2

TO-252

2.5

Junction to Case

TO-277

13 (Note 3)

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 1)

45

V

0.58

V

Forward Voltage Drop

0.53

V

50

300

μA

Leakage Current (Note 1)

12

40

mA

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Thermal resistance junction to case mounted on heatsink.

3. Mounted on an FR4 PCB, single-sided copper, with 100cm2 copper pad area.