SIHFZ48RL datasheet(2/10 Pages) TFUNK

2 / 10 page

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Document Number: 91296

S11-1054-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Current limited by the package, (die current = 72 A).

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

-0.8

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mAc

-0.60

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 43 Ab

0.018



Forward Transconductance

gfs

VDS = 25 V, ID = 43 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5c

2400

Output Capacitance

Coss

1300

Reverse Transfer Capacitance

Crss

190

Total Gate Charge

VGS = 10 V

ID = 72 A, VDS = 48 V,

see fig. 6 and 13b, c

110

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 72 A,

Rg = 9.1 , RD = 0.34 , see fig. 10b, c

-8.1

Rise Time

250

Turn-Off Delay Time

td(off)

210

Fall Time

250

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

50c

Pulsed Diode Forward Currenta

ISM

290

Body Diode Voltage

VSD

TJ = 25 °C, IS = 72 A, VGS = 0 Vb

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb, c

120

180

Body Diode Reverse Recovery Charge

Qrr

0.50

0.80

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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