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KAF-8300 Datasheet(PDF) 10 Page - ON Semiconductor

Part # KAF-8300
Description  Full Frame CCD Image Sensor
PDF  28 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAF-8300 Datasheet(HTML) 10 Page - ON Semiconductor

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KAF−8300
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10
Table 6. SPECIFICATIONS (continued)
Description
Verification
Plan
Notes
Unit
Max.
Nom.
Min.
Symbol
MONOCHROME DEVICES
Sensitivity − Monochrome
Resp
465
−
655
mV
Die18
Quantum Efficiency
Microlens, Clear Glass (540 nm)
Microlens, No Glass (540 nm)
Microlens, AR Glass (540 nm)
No Microlens, Clear G. (560 nm)
QE
−
−
−
−
54
60
56
37
−
−
−
−
%
Design19
1. Increasing output load currents to improve bandwidth will decrease these values.
2. Specified from 12
°C to 60°C.
3. Saturation signal level achieved while meeting Le specification. Specified from 0
°C to 40°C.
4. Operating temperature = 60
°C.
5. Worst case deviation, (from 10 mV to VSAT min), relative to a linear fit applied between 0 and 500 mV exposure.
6. Operating temperature = 25
°C.
7. Peak to peak non-uniformity test based on an average of 185
× 185 blocks.
8. Average non-illuminated signal with respect to over clocked horizontal register signal.
9. Absolute difference between the maximum and minimum average signal levels of 185
× 185 blocks within the sensor.
10. Dark rms deviation of a multi-sampled pixel as measured using the KAF−8300 Evaluation Board.
11. 20Log (VSAT / N).
12. Gradual variations in hue (red with respect to green pixels and blue with respect to green pixels) in regions of interest of 185
× 185 blocks.
13. Measured per transfer at 80% of VSAT.
14. ESAT equals the exposure required to achieve saturation. X_b represents the number of ESAT exposures the sensor can tolerate before
failure. X_b characterized at 25
°C.
15. Video level DC offset with respect to ground at clamp position. Refer to Figure 17.
16. Last stage only. CLOAD = 10 pF. Then f−3dB = (1 / (2p ⋅ ROUT ⋅ CLOAD)).
17. Amount of artificial signal due to H1 coupling.
18. A parameter that is measured on every sensor during production testing.
19. A parameter that is quantified during the design verification activity.
20. Calculated value subtracting the noise contribution from the KAF−8300 Evaluation Board.
21. Process optimization has effectively eliminated vertical striations.
22. CTE = 1 − CTI. Where CTE is charge transfer efficiency and CTI is charge transfer inefficiency. CTI is the measured value.



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