2N6303 datasheet(1/3 Pages) MICROSEMI

Part #	2N6303

Description	Silicon PNP Power Transistors

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Manufacturer	MICROSEMI [Microsemi Corporation]

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MSC1062.PDF 05-25-99

2N6303

ABSOLUTE MAXIMUM RATI

ABSOLUTE MAXIMUM RATINGS:

NGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

VCEO*

Collector-Emitter Voltage

- 80

Vdc

VCB*

Collector-Base Voltage

- 80

Vdc

VEB*

Emitter-Base Voltage

- 4.0

Vdc

IC*

Peak Collector Current

10

Adc

IC*

Continuous Collector Current

3.0

Adc

IB*

Base Current

0.5

Adc

TSTG*

Storage Temperature

-65 to 200

°°C

TJ*

Operating Junction Temperature

-65 to 200

°°C

PD*

Total Device Dissipation

TC = 25°°C

Derate above 25

°°C

6.0

34.3

Watts

mW/

°°C

PD*

θθ JC

Total Device Dissipation

TA = 25°°C

Derate above 25

°°C

Thermal Resistance

Junction to Case

Junction to Ambient

1.0

5.71

29

175

Watts

mW/

°°C

°°C/W

Silicon PNP Power

Transistors

TO-5

APPLICATIONS:

•

High-Speed Switching

•

Medium-Current Switching

•

High-Frequency Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE DIFFUSED

PLANAR process. This technology produces high voltage devices

with excellent switching speeds, frequency response, gain linearity,

saturation voltages, high current gain, and safe operating areas.

They are intended for use in Commercial, Industrial, and Military

power switching, amplifier, and regulator applications.

Ultrasonically bonded leads and controlled die mount techniques are

utilized to further increase the SOA capability and inherent reliability

of these devices. The temperature range to 200

°°C permits reliable

operation in high ambients, and the hermetically sealed package

insures maximum reliability and long life.

*

Indicates JEDEC registered data.

FEATURES:

•

Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)

•

DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc

•

Low Collector-Emitter Saturation Voltage:

VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc

•

High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)

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