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MRF951 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # MRF951
Description  RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
PDF  5 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MRF951 Datasheet(HTML) 1 Page - Microsemi Corporation

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MSC1326.PDF 10-25-99
MRF951
DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
10
Vdc
VCBO
Collector-Base Voltage
20
Vdc
VEBO
Emitter-Base Voltage
1.5
Vdc
IC
Collector Current
100
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
.475
Watts
Tstg
Storage Junction Temperature Range
-65 to +150
ºC
TJmax
Maximum Junction Temperature
150
ºC
Macro X
Features
•
Fully Implanted Base and Emitter Structure.
•
High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz
•
Low Noise Figure – 1.3dB @ 1GHz
•
Ftau - 8.0 GHz @ 6v, 30mA
• Cost Effective Macro X Package
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855


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