Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC1610.PDF 2000-11-06

MS1077

RF & MICROWAVE TRANSISTORS

R F P R O D UCT S DI VI SI ON

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

The MS1077 is a Class AB epitaxial silicon NPN planar transistor

designed primarily for SSB communications. This device utilizes

emitter ballasting to achieve extreme ruggedness under severe

operating conditions.

IMPORTANT: For the most current data, consult MICROSEMI’s website:

http://www.microsemi.com

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

!"Optimized for SSB

!"30 MHz

!"28 Volts

!"IMD –30dB

!"Common Emitter

!"Gold Metallization

!"

!"

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

!"HF SSB Applications

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25°°°°C)

Symbol

Parameter

Value

Unit

V

CBO

Collector-Base Voltage

70

V

V

CEO

Collector-Emitter Voltage

35

V

V

EBO

Emitter-Base Voltage

4.0

V

I

C

Device Current

12

A

P

DISS

Power Dissipation

175

W

T

J

Junction Temperature

+200

°C

T

STG

Storage Temperature

-65 to +150

°C

THERMAL DATA

R

TH(j-c)

Junction-Case Thermal Resistance

1.0

°C/W