Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC1627.PDF 2000-12-03

MS1510

RF & MICROWAVE TRANSISTORS

R F P R O D UCT S DI VI SI ON

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar

transistor designed primarily for broadband applications in the 450 –

512 MHz land mobile radio band. This device utilizes diffused emitter

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

!"470 MHz

!"12.5 Volts

!"Efficiency 55%

!"Common Emitter

APPLICATIONS/

APPLICATIONS/

APPLICATIONS/

APPLICATIONS/BENEFITS

BENEFITS

BENEFITS

BENEFITS

!"UHF Mobile

Applications

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

16

V

Emitter-Base Voltage

4.0

V

Device Current

8.0

A

Power Dissipation

117

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

THERMAL DATA

Junction-Case Thermal Resistance

1.5

°C/W

.500 6LFL (M111)

EPOXY SEALED

4 1

2 3