MSC0890.PDF

MS1578

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

28

V

Collector-Base Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

25

A

Power Dissipation

300

W

Junction Temperature

+200

°°C

Storage Temperature

- 65 to + 150

°°C

Thermal Data

Thermal Data

Junction-Case Thermal Resistance

0.60

°°C/W

Features

Features

•

GOLD METALLIZATION

•• DESIGNED FOR LINEAR OPERATION HIGH SATURATED

POWER CAPABILITY

•• POUT = 150 W PEP

•• INTERNAL INPUT/OUTPUT MATCHING

•• COMMON EMITTER CONFIGURATION

•• 8.0dB GAIN @ 900 MHz

•• MAX IMD -28dBc @ 150 W PEP

•• 5:1 VSWR CAPABILITY @ RATED CONDITIONS

DESCRIPTION:

DESCRIPTION:

THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN

PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB

OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE

MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz

CELLULAR BASE STATION APPLICATIONS.

RF & MICROWAVE TRANSISTORS

800-960MHz CELLULAR BASE STATION

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855