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ESD7321 Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESD7321
Description  ESD Protection Diodes
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESD7321 Datasheet(HTML) 2 Page - ON Semiconductor

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ESD7321
www.onsemi.com
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ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Bi−Directional ESD
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
7.0
V
Breakdown Voltage
VBR
IT = 1 mA (Note 1)
8.0
V
Reverse Leakage Current
IR
VRWM = 7.0 V, I/O to GND
200
nA
Clamping Voltage
VC
IPP = 8 A − (IEC61000−4−2 Level 2 Equivalent
(
±4 kV Contact, ±8 kV Air))
18
V
ESD Clamping Voltage
VC
Per IEC 61000−4−2
See Figures 1 and 2
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
0.5
pF
Dynamic Resistance
RDYN
TLP Pulse
1
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2



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