ACE4494M datasheet(3/7 Pages) ACE

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ACE4494M

N-Channel 100-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V

VDS = 80 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-Resistance

RDS(ON)

VGS = 10 V, ID = 8.5 A

mΩ

VGS = 5.5 V, ID = 6.8 A

Forward Transconductance

gFS

VDS = 15 V, ID = 8.5 A

Diode Forward Voltage

VSD

IS = 2.5 A, VGS = 0 V

0.7

Dynamic

Total Gate Charge

VDS = 50 V, VGS = 5.5 V, ID = 8.5 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = 50 V, RL = 5.8 Ω, ID = 8.5 A,

VGEN = 10 V, RGEN = 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

124

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

4927

Output Capacitance

Coss

404

Reverse Transfer Capacitance

Crss

373

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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