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ACE5820 Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE5820 Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 5 page ![]() ACE5820 DFNWB2X2-6L N-Channel MOSFETS VER 1.1 2 Ordering information ACE5820 XX + H Mosfet Electrical Characteristics (Ta=25 OC unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 uA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.35 1 V Drain-source on-resistance(note 3) RDS(on) VGS =4.5V, ID =9.7A 11 mΩ VGS =2.5V, ID =9A 13 mΩ VGS =1.8V, ID =8.1A 16 mΩ VGS =1.5V, ID =4.5A 22 mΩ VGS =1.2V, ID =2.4A 41 mΩ Forward tranconductance(note 3) gFS VDS =4V, ID =9.7A 20 S Diode forward voltage (note 3) VSD IS=10A, VGS = 0V 1.2 V DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss VDS =4V,VGS =0V,f =1MHz 1800 pF Output Capacitance Coss 650 pF Reverse Transfer Capacitance Crss 450 pF Gate Resistance Rg f=1MHz 2.5 Ω LN : DFNWB2*2-6L Pb - free Halogen - free |
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