ACE5830 datasheet(2/6 Pages) ACE

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ACE5830

DFNWB2X2-6L

N-Channel

MOSFETS

VER 1.1

Ordering information

ACE5830 XX + H

Mosfet

Electrical Characteristics (Ta=25 OC unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =30V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±10V, VDS = 0V

±10

µA

Gate threshold voltage(note 1)

VGS(th)

VDS =VGS, ID =250µA

0.6

Drain-source on-resistance (note 1)

RDS(on)

VGS =10V, ID =5A

mΩ

VGS =4.5V, ID =5A

mΩ

VGS =2.5V, ID =4A

mΩ

Forward tranconductance (note 1)

gFS

VDS =5V, ID =4A

Diode forward voltage (note 1)

VSD

IS=1A, VGS = 0V

DYNAMIC PARAMETERS(note2)

Input Capacitance

Ciss

VDS =15V,VGS =0V,f =1MHz

245

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING PARAMETERS (note 2)

Turn-on delay time

td(on)

VDD=15V,VGS=10V

RL=3.75

Ω,RGEN=3Ω

Turn-on rise time

3.5

Turn-off delay time

td(off)

Turn-off fall time

3.5

Total Gate Charge

VDS =15V,VGS =10V,ID=4A

Gate-Source Charge

Qgs

0.5

Gate-Drain Charge

Qgd

Notes: 1. Pulse Te

st : Pulse width≤300μs, duty cycle≤0.5%.

2. Guaranteed by design, not subject to production testing.

LN : DFNWB2*2-6L

Pb - free

Halogen - free

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