SSFN3313 datasheet(2/4 Pages) GOOD-ARK

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Rev.1.0

SSFN3313

30V P-Channel MOSFET

Gate-Body Leakage Current

IGSS

VGS=±25V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1.7

-2.2

-3

VGS=-4.5V, ID=-7A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-9A

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-10A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

1500

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V,

F=1.0MHz

182

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDS=-15V,VGS=-10V,RGEN=3Ω

ID=1A

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-15V,ID=-10A,VGS=-10V

4.5

Body Diode Reverse Recovery Time

Trr

Body Diode Reverse Recovery Charge

Qrr

IF=-10A, dI/dt=100A/µs

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-1A

-0.74

-1

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in

2 FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

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