CEP30P03 datasheet(1/4 Pages) CET

Part #	CEP30P03

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -30A, RDS(ON) =32mΩ @VGS = -10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

-30

0.33

50

-120

-30

±20

V

W

A

V

W/ C

1

S

G

D

G

S

D

G

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

RDS(ON) =50mΩ @VGS = -4.5V.

CEP30P03/CEB30P03

Lead free product is acquired.

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

http://www.cetsemi.com

Rev 1. 2011.Feb

Details are subject to change without notice .

-21

A

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

3

RθJC

RθJA

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