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MMDF2P01HD Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF2P01HD Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 12 page  MMDF2P01HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 3.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 12 − − 17 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 12 Vdc, VGS = 0 Vdc) (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 µAdc Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 4.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 0.7 − 1.0 3.0 1.1 − Vdc mV/ °C Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 2.0 Adc) (VGS = 2.7 Vdc, ID = 1.0 Adc) RDS(on) − − 0.16 0.2 0.180 0.220 Ohm Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc) gFS 3.0 4.75 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 10 Vd V 0Vd Ciss − 530 740 pF Output Capacitance (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 410 570 Reverse Transfer Capacitance f = 1.0 MHz) Crss − 177 250 SWITCHING CHARACTERISTICS (Note 5.) Turn−On Delay Time td(on) − 21 45 ns Rise Time (VDD = 6.0 Vdc, ID = 2.0 Adc, VGS =27Vdc tr − 156 315 Turn−Off Delay Time VGS = 2.7 Vdc, RG = 6.0 Ω) td(off) − 38 75 Fall Time RG 6.0 Ω) tf − 68 135 Turn−On Delay Time td(on) − 16 35 Rise Time (VDS = 6.0 Vdc, ID = 2.0 Adc, VGS =45Vdc tr − 44 90 Turn−Off Delay Time VGS = 4.5 Vdc, RG = 6.0 Ω) td(off) − 68 135 Fall Time RG 6.0 Ω) tf − 54 110 Gate Charge QT − 9.3 13 nC (VDS = 10 Vdc, ID = 2.0 Adc, Q1 − 0.8 − (VDS 10 Vdc, ID 2.0 Adc, VGS = 4.5 Vdc) Q2 − 4.0 − Q3 − 3.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 4.) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 1.69 1.2 2.0 − Vdc Reverse Recovery Time t 48 ns Reverse Recovery Time trr − 48 − ns (IS = 2.0 Adc, VGS = 0 Vdc, ta − 23 − (IS 2.0 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb − 25 − Reverse Recovery Stored Charge QRR − 0.05 − µC 3. Negative sign for P−Channel device omitted for clarity. 4. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. |
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