MMDFS2P102R2 datasheet(6/11 Pages) ONSEMI

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MMDFS2P102

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TYPICAL FET ELECTRICAL CHARACTERISTICS

Figure 13. FET Thermal Response

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

0.25 IS

TIME

t, TIME (s)

1.0

0.1

0.001

D = 0.5

SINGLE PULSE

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

0.2

0.1

0.05

0.02

0.01

1.0E+02

1.0E+03

0.0001

0.01

NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)

CHIP

JUNCTION

0.0175

0.0154 F

0.0710

0.0854 F

0.2706

0.3074 F

0.5776

1.7891 F

0.7086

107.55 F

AMBIENT

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

TJ = 125°C

Figure 15. Typical Forward Voltage

Figure 16. Maximum Forward Voltage

0.7

1.0

0.1

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.0

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.4

1.0

0.1

0.4

0.2

0.3

0.5

0.6

0.8

0.9

0.2

0.4

0.6

0.8

1.0

1.2

°C

−40

°C

TJ = 125°C

°C

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