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MMDF2N05ZR2 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF2N05ZR2 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 10 page ![]() MMDF2N05ZR2 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Note 3) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 50 − 56 55 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0 Vdc) (VDS = 15 Vdc, VGS = 0 Vdc, TJ = 55°C) IDSS − − − − 2.0 25 μAdc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0) IGSS − 0.14 0.5 ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Cpk ≥ 2.0) (Note 3) (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 − 3.0 −5.0 4.0 − Vdc mV/°C Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Note 3) (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 5.0 Vdc, ID = 0.6 Adc) RDS(on) − − 200 350 300 500 mΩ Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc) gFS − 2.0 − mMhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 15 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 104 − pF Output Capacitance Coss − 58 − Transfer Capacitance Crss − 16 − SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 30 Vdc, ID = 0.6 Adc, VGS = 10 Vdc, RG = 25 Ω) td(on) − 24 48 ns Rise Time tr − 46 92 Turn−Off Delay Time td(off) − 130 260 Fall Time tf − 71 142 Gate Charge (see figure 8) (VDS = 25 Vdc, ID = 1.3 Adc, VGS = 10 Vdc) QT − 3.3 4.6 nC Q1 − 0.7 − Q2 − 1.3 − Q3 − 1.4 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 2.0 Adc, VGS = 0 Vdc) VSD − 0.82 1.4 Vdc Reverse Recovery Time (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 66 − ns ta − 23 − tb − 43 − Reverse Recovery Storage Charge QRR − 0.08 − μC 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Cpk = Max limit − Typ 3 x SIGMA |
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