MMSF5P02HDR2 datasheet(2/11 Pages) ONSEMI

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MMSF5P02HD

http://onsemi.com

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)

Rating

Symbol

Max

Unit

Drain−to−Source Voltage

VDSS

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

Gate−to−Source Voltage − Continuous

VGS

± 8.0

1″ SQ.

FR−4 or G−10 PCB

10 seconds

Thermal Resistance − Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 2)

RTHJA

IDM

2.5

8.7

7.0

43.5

°C/W

Watts

mW/°C

Minimum

FR−4 or G−10 PCB

10 seconds

Thermal Resistance − Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 2)

RTHJA

IDM

1.56

12.5

6.9

5.5

°C/W

Watts

mW/°C

Operating and Storage Temperature Range

TJ, Tstg

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W)

EAS

1000

1. Negative sign for P−Channel devices omitted for clarity.

2. Repetitive rating; pulse width limited by maximum junction temperature.

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